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Published
by UMIST in Manchester .

Written in English

**Edition Notes**

Statement | Akhtar M. Malik ; supervised by M.J. Godfrey. |

Contributions | Godfrey, M. J., Physics. |

ID Numbers | |
---|---|

Open Library | OL17260718M |

Ishwara Bhat, in Wide Bandgap Semiconductor Power Devices, Effective mass of carries. The effective mass of electrons and holes in a band is important for the transport property and also for describing various electrical and optical properties of the material. The value of the effective mass is dependent on the local structure of the band near the band extremum and is defined by The one- or multi-band effective mass theory is used wherever this method is applicable. A summary of group theory for application in semiconductor physics is given in an Appendix. Chapter 4 deals with the statistical distribution of charge carriers over the band and localized states in thermodynamic :// Introduction The effective mass of a semiconductor is obtained by fitting the actual E-k diagram around the conduction band minimum or the valence band maximum by a parabola. While this concept is simple enough the issue turns out to be substancially more complex due to the multitude and the occasional anisotropy of the minima and ~bart/book/ 1. Electronic Properties in Semiconductor Heterostructures L. J. Sham Introduction 1 Basic Electronic Properties in Quantum Wells 3 Typical Band Structure of Bulk Semiconductors 3 Electron Confinement 4 Hole Subbands 5 Interface Effects on Electrons 8 Effective Mass Theory for Heterostructures 9

Experimental investigations of the effect of hydrostatic pressure (up to 15 kilobar) and magnetic field (up to 11 T) on the low temperature J(V) chara M. Tadic and Z. Ikonic The multiband effective-mass model of the electronic structure and intersubband absorption in p-type-doped twinning superlattices Journal of Physics: Condensed Mat (). S. Tomic, V. Milanovic, M. Tadic, and Z. Ikonic Gain optimization in intersubband quantum well lasers by inverse spectral The data may be fitted to the general equation including thermionic emission (TE) and thermionic field emission (TFE) as below: (1) I = I S exp V E 0 1-exp-qV kT (2) E 0 ≈ E 00 coth qE 00 kT (3) E 00 = q ℏ 2 N d m ∗ ε r ε 0 Here m ∗ is the effective mass of electrons in the semiconductor, ε This expression states that the current is the product of the electronic charge, q, a velocity, v, and the density of available carriers in the semiconductor located next to the velocity equals the mobility multiplied with the field at the interface for the diffusion current and the Richardson velocity (see section ) for the thermionic emission ~bart/book/book/chapter3/

Series on Semiconductor Science and Technology 1. M. Jaros: Physics and applications of semiconductor microstructures 2. V. You must not circulate this book in any other binding or cover Breakdown of eﬀective mass theory 46 Magnetic breakdown 51 Bound electron states in magnetic ﬁelds Eaves L., Stevens K.W.H., Sheard F.W. () Tunnel Currents and Electron Tunnelling Times in Semiconductor Heterostructure Barriers in the Presence of an Applied Magnetic Field. In: Kelly M.J., Weisbuch C. (eds) The Physics and Fabrication of Microstructures and Microdevices. Springer Proceedings in Physics, vol Springer, Berlin, Heidelberg Abstract. The effective mass theory of tunnelling through heterostructure barriers and its limitations is. outlined. Experimental investigations of the effect of hydrostatic pressure (up to 15 kilobar) and magnetic field (up to 11T) on the low temperature J(V) characteristics of single barrier n + GaAs/(AlGa)As/n-GaAs/ n + GaAs tunnelling structures are :// This book presents the physics of semiconductor nanostructures with emphasis on their electronic transport properties. At its heart are five fundamental transport phenomena: quantized conductance, tunneling transport, the Aharonov–Bohm effect, the quantum Hall effect, and the Coulomb blockade effect. The book starts out with basics of solid state and semiconductor physics, such as crystal :oso//.

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